| PART |
Description |
Maker |
| M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM
65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group
SONY
|
| HM6287 HM6287P HM6287LP |
65536-word x 1-bit Speed CMOS Static RMA
|
Hitachi,Ltd.
|
| CXK5T8512TM CXK5T8512TM-10LLX CXK5T8512TM-12LLX CX |
65536-word X 8-bit High Speed CMOS Static RAM 65536字8位高速CMOS静态RAM
|
Sony, Corp.
SONY[Sony Corporation]
|
| TC511664BZ TC511664B |
65536 word x 16 bit DRAM
65,536 WORD x 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| HM53461 HM53461P-10 HM53461P-12 HM53461P-15 HM5346 |
120ns; V(cc): -0.5 to 7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM
150ns; V(cc): -0.5 to 7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM
100ns; V(cc): -0.5 to 7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM
65,536-WORD x 4-BIT MULTIPORT CMOS VIDEO RAM
65536 word x 4 Bit Multiport CMOS Video RAM
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| UPD27C1024A |
65536 x 16-Bit CMOS UV EPROM
|
NEC Electronics
|
| M5M29KE131BTP |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
|
Renesas Electronics Corporation.
|
